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AUIRFS4127 auirfsl4127 hexfet ? power mosfet d s g features ? ? advanced process technology ? ? ultra low on-resistance ?? 175c operating temperature ?? fast switching ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * description specifically designed for automotive applications, this hexfet? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. v dss 200v r ds(on) typ. 18.6m ?? max 22m ?? i d 72a ? d 2 pak AUIRFS4127 to-262 auirfsl4127 s d g s d g d g d s gate drain source base part number package type standard pack form quantity auirfsl4127 to-262 tube 50 auirfsl4127 AUIRFS4127 d 2 -pak tube 50 AUIRFS4127 tape and reel left 800 AUIRFS4127trl orderable part number 1 www.irf.com ? 2015 international rectifier submit datasheet feedback june 16, 2015 absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any ot her condition beyond those in dicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for exte nded periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and st ill air conditions. ambient temperature (ta) is 25c, unle ss otherwise specified. parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 72 a i d @ t c = 100c continuous drain current, v gs @ 10v 51 i dm pulsed drain current ? 300 p d @t c = 25c power dissipation 375 w linear derating factor 2.5 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery ? 57 v/ns e as (thermally limited) single pulse avalanche energy ? 250 mj i ar avalanche current ? see fig. 14, 15, 22a, 22b a e ar repetitive avalanche energy ? mj t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature for 10 seconds 300(1.6mm from case) ? c ? thermal resistance symbol parameter typ. max. units c/w r ? jc junction-to-case ?? ??? 0.4 r ? ja junction-to-ambient ? ??? 40 hexfet? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/
2 www.irf.com ? 2015 international rectifier submit datasheet feedback june 16, 2015 ? auirfs/sl4127 notes: ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.26mh, r g = 25 ? , i as = 44a, v gs =10v. part not recommended for use above this value. ?? i sd ? 44a, di/dt ? 760a/s, v dd ? v (br)dss , t j ?? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same c harging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ?? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. : http://www.irf.com/technical- info/appnotes/an-994.pdf ? r ? is measured at t j approximately 90c. ?? r ? jc value shown is at time zero. static electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.23 ??? v/c reference to 25c, i d = 5ma ? r ds(on) static drain-to-source on-resistance ??? 18.6 22 m ?? v gs = 10v, i d = 44a ? v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a i dss drain-to-source leakage current ??? ??? 20 a v ds = 200v, v gs = 0v ??? ??? 250 v ds = 200v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage ??? ??? 100 v gs = 20v ? gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g internal gate resistance ??? 3.0 ??? ?? na ? gfs forward trans conductance 79 ??? ??? s v ds = 50v, i d = 44a dynamic electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions q g total gate charge ??? 100 150 nc ? i d = 44a q gs gate-to-source charge ??? 30 ??? v ds = 100v q gd gate-to-drain ("miller" ) charge ??? 31 ??? v gs = 10v ? q sync total gate charge sync. (q g - q gd ) ??? 69 ??? t d(on) turn-on delay time ??? 17 ??? ns v dd = 130v t r rise time ??? 18 ??? i d = 44a t d(off) turn-off delay time ??? 56 ??? r g = 2.7 ? t f fall time ??? 22 ??? v gs = 10v ? c iss input capacitance ??? 5380 ??? pf v gs = 0v c oss output capacitance ??? 410 ??? v ds = 50v c rss reverse transfer capacitance ??? 86 ??? ? = 1.0 mhz (see fig. 5) c oss eff. (er) effective output capacita nce (energy related) ??? 360 ??? v gs = 0v, v ds = 0v to 160v ? c oss eff. (tr) effective output capacita nce (time related) ??? 590 ??? v gs = 0v, v ds = 0v to 160v ? diode characteristics ??? ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 72 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 300 integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 44a, v gs = 0v ? t rr ? reverse recovery time ??? 136 ??? ns t j = 25c ??? 139 ??? t j = 125c q rr reverse recovery charge ??? 458 ??? nc t j = 25c ??? 688 ??? t j = 125c i rrm reverse recovery current ??? 8.3 ??? a t j = 25c v r = 100v, i f = 44a di/dt = 100a/s ?
3 www.irf.com ? 2015 international rectifier submit datasheet feedback june 16, 2015 ? auirfs/sl4127 fig 4. normalized on-resistance vs. temperature fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 3.0 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ) v ds = 50v ? 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 44a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20406080100120 q g total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 160v v ds = 100v v ds = 40v i d = 44a
4 www.irf.com ? 2015 international rectifier submit datasheet feedback june 16, 2015 ? auirfs/sl4127 fig 8. maximum safe operating area fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 11. typical c oss stored energy fig 12. maximum avalanche energy vs. drain current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a in c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 i d , d r a i n c u r r e n t ( a ) -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 180 200 220 240 260 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 5ma 0 40 80 120 160 200 v ds, drain-to-source voltage (v) 0.0 2.0 4.0 6.0 8.0 e n e r g y ( j ) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 8.2a 13a bottom 44a fig 10. drain-to-source breakdown voltage
5 www.irf.com ? 2015 international rectifier submit datasheet feedback june 16, 2015 ? auirfs/sl4127 fig 13. maximum effective transient thermal impedance, junction-to-case fig 15. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 22a, 22b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 14) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? fig 14. avalanche current vs. pulse width 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 44a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse)
6 www.irf.com ? 2015 international rectifier submit datasheet feedback june 16, 2015 ? auirfs/sl4127 fig 20. typical stored charge vs. dif/dt fig 19. typical stored charge vs. dif/dt fig 18. typical recovery current vs. dif/dt fig 16. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 5.0 6.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 250a 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 10 20 30 40 50 i r r m - ( a ) i f = 29a v r = 100v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 10 20 30 40 50 60 i r r m - ( a ) i f = 44a v r = 100v t j = 125c t j = 25c 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 500 1000 1500 2000 2500 3000 q r r - ( n c ) i f = 29a v r = 100v t j = 125c t j = 25c fig 17. typical recovery current vs. dif/dt 100 200 300 400 500 600 700 800 900 1000 di f / dt - (a / s) 0 500 1000 1500 2000 2500 3000 q r r - ( n c ) i f = 44a v r = 100v t j = 125c t j = 25c
7 www.irf.com ? 2015 international rectifier submit datasheet feedback june 16, 2015 ? auirfs/sl4127 fig 21. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 22a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 23a. switching time test circuit fig 24a. gate charge test circuit t p v (br)dss i as fig 22b. unclamped inductive waveforms fig 23b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 24b. gate charge waveform vdd ?
8 www.irf.com ? 2015 international rectifier submit datasheet feedback june 16, 2015 ? auirfs/sl4127 to-262 package outline (dimensions are shown in millimeters (inches) to-262 part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ywwa xx ? xx date code y= year ww= work week aufsl4127 lot code part number ir logo
9 www.irf.com ? 2015 international rectifier submit datasheet feedback june 16, 2015 ? auirfs/sl4127 d 2 pak (to-263ab) package outline (dimensions are shown in millimeters (inches)) d 2 pak (to-263ab) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ywwa xx ? xx date code y= year ww= work week aufs4127 lot code part number ir logo
10 www.irf.com ? 2015 international rectifier submit datasheet feedback june 16, 2015 ? auirfs/sl4127 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak (to-263ab) tape & reel information (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/
11 www.irf.com ? 2015 international rectifier submit datasheet feedback june 16, 2015 ? auirfs/sl4127 ? qualification standards can be foun d at international rectifier?s web site: http//www.irf.com/ ?? highest passing voltage. qualification information ? ? qualification level automotive (per aec-q101) ?? comments: this part number(s) pass ed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. 3l-d2 pak msl1 3l? to-262 n/a esd human body model class h2 (+/- 4000v) ?? aec-q101-001 charged device model class c5 (+/- 2000v) ?? aec-q101-005 rohs compliant yes moisture sensitivity level
12 www.irf.com ? 2015 international rectifier submit datasheet feedback june 16, 2015 ? auirfs/sl4127 important notice unless specifically designated for the automotive market, internatio nal rectifier corporation and it s subsidiaries (ir) reserve the right to make corrections, modifi cations, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirement s with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and c onditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specificat ions applicable at the time of sale in accordance with ir?s standard warranty. testing and other qualit y control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, te sting of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer prod ucts and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations , and notices. reproduction of this information with altera- tions is an unfair and deceptive business practice. ir is not re sponsible or liable for such altered documentation. infor- mation of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indem nify and hold international rectifier and its officers, em- ployees, subsidiaries, affiliates, and di stributors harmless against a ll claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any clai m of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was neg ligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are de- signed and manufactured to meet dla military specifications required by certain m ilitary, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the bu yer?s own risk and that they are solely re sponsible for compliance with all legal a nd regulatory requirements in connection with such use. ir products are neither designed nor intended for use in autom otive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designa- tion ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105

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